Dual N-Channel MOSFET, 6 A, 40 V, 8-Pin SOIC FDS8949

Channel Type:

N

Maximum Continuous Drain Current:

6 A

Maximum Drain Source Voltage:

40 V

Package Type:

SOIC

Mounting Type:

Surface Mount

Pin Count:

8

Maximum Drain Source Resistance:

29 mΩ

Channel Mode:

Enhancement

Minimum Gate Threshold Voltage:

1V

Maximum Power Dissipation:

2 W

Transistor Configuration:

Isolated

Maximum Gate Source Voltage:

-20 V, +20 V

Length:

5mm

Transistor Material:

Si

Number of Elements per Chip:

2

Typical Gate Charge @ Vgs:

7.7 nC @ 5 V

Width:

4mm

Maximum Operating Temperature:

+150 °C

Minimum Operating Temperature:

-55 °C

Height:

1.5mm