N-Channel MOSFET, 1 A, 600 V, 3-Pin IPAK STD1NK60-1

Channel Type:

N

Maximum Continuous Drain Current:

1 A

Maximum Drain Source Voltage:

600 V

Package Type:

IPAK (TO-251)

Series:

MDmesh, SuperMESH

Mounting Type:

Through Hole

Pin Count:

3

Maximum Drain Source Resistance:

8.5 Ω

Channel Mode:

Enhancement

Maximum Gate Threshold Voltage:

3.7V

Minimum Gate Threshold Voltage:

2.25V

Maximum Power Dissipation:

30 W

Transistor Configuration:

Single

Maximum Gate Source Voltage:

-30 V, +30 V

Number of Elements per Chip:

1

Transistor Material:

Si

Maximum Operating Temperature:

+150 °C

Typical Gate Charge @ Vgs:

7 nC @ 10 V

Length:

6.6mm

Width:

6.2mm

Height:

2.4mm

Minimum Operating Temperature:

-55 °C