Infineon HEXFET Dual N-Channel MOSFET, 3 A, 50 V, 8-Pin SOIC IRF7103TRPBF

Infineon HEXFET Dual N-Channel MOSFET, 3 A, 50 V, 8-Pin SOIC IRF7103TRPBF

Manufacturer:
Manufacturer Part No:
IRF7103TRPBF
Enrgtech Part No:
ET13933200
Warranty:
Manufacturer
£ 0.1700
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Channel Type:
N
Maximum Continuous Drain Current:
3 A
Maximum Drain Source Voltage:
50 V
Series:
HEXFET
Package Type:
SOIC
Mounting Type:
Surface Mount
Pin Count:
8
Maximum Drain Source Resistance:
200 mΩ
Channel Mode:
Enhancement
Maximum Gate Threshold Voltage:
3V
Minimum Gate Threshold Voltage:
1V
Maximum Power Dissipation:
2 W
Transistor Configuration:
Isolated
Maximum Gate Source Voltage:
-20 V, +20 V
Typical Gate Charge @ Vgs:
12 nC @ 10 V
Maximum Operating Temperature:
+150 °C
Length:
5mm
Width:
4mm
Number of Elements per Chip:
2
Transistor Material:
Si
Height:
1.5mm
Minimum Operating Temperature:
-55 °C
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0900766b813418d0.pdf(datasheets)
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0900766b81644fb4.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.



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