

The MDmesh™ is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company’s PowerMESH™horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the Company’s proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competition’s products.
High dv/dt and avalanche capabilities
100% avalanche tested
Low input capacitance and gate charge
Tight process control and high manufacturing yields
Low gate input resistance
Applications
Switching application
100% avalanche tested
Low input capacitance and gate charge
Tight process control and high manufacturing yields
Low gate input resistance
Applications
Switching application

N-Channel MOSFET, 12 A, 3-Pin D2PAK STB12NM50T4
Manufacturer:
STMicroelectronics
Manufacturer Part No:
STB12NM50T4
Enrgtech Part No:
ET11697726
Warranty:
Manufacturer
£ 1.02
Checking for live stock
Channel Type:
N
Maximum Continuous Drain Current:
12 A
Package Type:
D2PAK (TO-263)
Mounting Type:
Surface Mount
Pin Count:
3
Maximum Drain Source Resistance:
350 mΩ
Channel Mode:
Enhancement
Maximum Gate Threshold Voltage:
5V
Minimum Gate Threshold Voltage:
3V
Maximum Power Dissipation:
160 W
Transistor Configuration:
Single
Maximum Gate Source Voltage:
±30 V