N-Channel MOSFET, 540 mA, 55 V, 3-Pin SOT-23 BSS670S2LH6327XTSA1

Channel Type:

N

Maximum Continuous Drain Current:

540 mA

Maximum Drain Source Voltage:

55 V

Series:

OptiMOS™

Package Type:

SOT-23

Mounting Type:

Surface Mount

Pin Count:

3

Maximum Drain Source Resistance:

825 mΩ

Channel Mode:

Enhancement

Maximum Gate Threshold Voltage:

2V

Minimum Gate Threshold Voltage:

1.2V

Maximum Power Dissipation:

360 mW

Transistor Configuration:

Single

Maximum Gate Source Voltage:

-20 V, +20 V

Number of Elements per Chip:

1

Transistor Material:

Si

Width:

1.3mm

Maximum Operating Temperature:

+150 °C

Typical Gate Charge @ Vgs:

1.7 nC @ 10 V

Length:

2.9mm

Minimum Operating Temperature:

-55 °C

Height:

1mm