N-Channel MOSFET, 2.5 A, 1500 V, 3-Pin H2PAK-2 STH3N150-2

Channel Type:

N

Maximum Continuous Drain Current:

2.5 A

Maximum Drain Source Voltage:

1500 V

Package Type:

H2PAK-2

Series:

MDmesh

Mounting Type:

Surface Mount

Pin Count:

3

Maximum Drain Source Resistance:

9 Ω

Channel Mode:

Enhancement

Maximum Gate Threshold Voltage:

5V

Minimum Gate Threshold Voltage:

3V

Maximum Power Dissipation:

140 W

Transistor Configuration:

Single

Maximum Gate Source Voltage:

-30 V, +30 V

Width:

15.8mm

Maximum Operating Temperature:

+150 °C

Transistor Material:

Si

Number of Elements per Chip:

1

Length:

10.4mm

Typical Gate Charge @ Vgs:

29.3 nC @ 10 V

Height:

4.8mm