N-Channel MOSFET, 9.9 A, 30 V, 8-Pin SOIC Si4134DY-T1-GE3

Channel Type:

N

Maximum Continuous Drain Current:

9.9 A

Maximum Drain Source Voltage:

30 V

Package Type:

SOIC

Mounting Type:

Surface Mount

Pin Count:

8

Maximum Drain Source Resistance:

14 mΩ

Channel Mode:

Enhancement

Minimum Gate Threshold Voltage:

1.2V

Maximum Power Dissipation:

2.5 W

Transistor Configuration:

Single

Maximum Gate Source Voltage:

-20 V, +20 V

Typical Gate Charge @ Vgs:

15.4 nC @ 10 V, 7.3 nC @ 4.5 V

Number of Elements per Chip:

1

Length:

5mm

Width:

4mm

Transistor Material:

Si

Maximum Operating Temperature:

+150 °C

Minimum Operating Temperature:

-55 °C

Height:

1.5mm