SiC Power Modules, ROHM
The Module consists of a Silicon-Carbide (SiC) DMOS Power FET Devices with a Schottky Barrier Diode (SBD) across the Drain and Source.
Half-Bridge configuration
Low Surge Current
Low Power Switching Losses
High-Speed Switching
Low Operating Temperature
Low Surge Current
Low Power Switching Losses
High-Speed Switching
Low Operating Temperature
Dual SiC N-Channel SiC Power Module, 300 A, 1200 V, 4-Pin C BSM300D12P2E001
Manufacturer:
ROHM
Manufacturer Part No:
BSM300D12P2E001
Enrgtech Part No:
ET12105098
Warranty:
Manufacturer
£ 736.71
Checking for live stock
Channel Type:
N
Maximum Continuous Drain Current:
300 A
Maximum Drain Source Voltage:
1200 V
Package Type:
C
Series:
BSM
Mounting Type:
Surface Mount
Pin Count:
4
Channel Mode:
Enhancement
Maximum Gate Threshold Voltage:
4V
Minimum Gate Threshold Voltage:
1.6V
Maximum Power Dissipation:
1875 W
Width:
57.95mm
