Dual P-Channel MOSFET, 8 A, 30 V, 8-Pin SOIC SI4925DDY-T1-GE3

Channel Type:

P

Maximum Continuous Drain Current:

8 A

Maximum Drain Source Voltage:

30 V

Package Type:

SOIC

Mounting Type:

Surface Mount

Pin Count:

8

Maximum Drain Source Resistance:

41 mΩ

Channel Mode:

Enhancement

Minimum Gate Threshold Voltage:

1V

Maximum Power Dissipation:

5 W

Transistor Configuration:

Isolated

Maximum Gate Source Voltage:

-20 V, +20 V

Number of Elements per Chip:

2

Typical Gate Charge @ Vgs:

32 nC @ 10 V

Length:

5mm

Transistor Material:

Si

Width:

4mm

Maximum Operating Temperature:

+150 °C

Height:

1.5mm

Minimum Operating Temperature:

-55 °C