The Infineon design of Cool MOS™ C7 is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction (SJ) principle and pioneered by Infineon Technologies. 600V Cool MOS™ C7 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The 600V C7 is the first technology ever with RDS(on)*A below 1Ohm*mm.
Pb-free lead plating
RoHS compliant
Superior thermal resistance 100% avalanche tested
Halogen-free according to IEC61249-2-23
Superior thermal resistance 100% avalanche tested
Halogen-free according to IEC61249-2-23
Silicon N-Channel MOSFET, 109 A, 600 V, 4-Pin TO-247-4 IPZ60R017C7XKSA1
Manufacturer:
Infineon
Manufacturer Part No:
IPZ60R017C7XKSA1
Enrgtech Part No:
ET21632832
Warranty:
Manufacturer
£ 7.41
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Channel Type:
N
Maximum Continuous Drain Current:
109 A
Maximum Drain Source Voltage:
600 V
Series:
CoolMOS™
Package Type:
TO-247-4
Mounting Type:
Through Hole
Pin Count:
4
Maximum Drain Source Resistance:
0.017 Ω
Channel Mode:
Enhancement
Maximum Gate Threshold Voltage:
4V
Transistor Material:
Silicon
Number of Elements per Chip:
1
