Silicon N-Channel MOSFET, 109 A, 600 V, 4-Pin TO-247-4 Infineon IPZ60R017C7XKSA1 | IPZ60R017C7XKSA1 | ET21632832

The Infineon design of Cool MOS™ C7 is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction (SJ) principle and pioneered by Infineon Technologies. 600V Cool MOS™ C7 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The 600V C7 is the first technology ever with RDS(on)*A below 1Ohm*mm. Pb-free lead plating RoHS compliant
Superior thermal resistance 100% avalanche tested
Halogen-free according to IEC61249-2-23

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Silicon N-Channel MOSFET, 109 A, 600 V, 4-Pin TO-247-4 IPZ60R017C7XKSA1

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