N-Channel MOSFET, 10 A, 3-Pin DPAK STD11N60DM2

Channel Type:

N

Maximum Continuous Drain Current:

10 A

Package Type:

DPAK (TO-252)

Mounting Type:

Surface Mount

Pin Count:

3

Maximum Drain Source Resistance:

420 mΩ

Channel Mode:

Enhancement

Maximum Gate Threshold Voltage:

5V

Minimum Gate Threshold Voltage:

4V

Maximum Power Dissipation:

110 W

Transistor Configuration:

Single

Maximum Gate Source Voltage:

±25 V

Width:

6.2mm

Maximum Operating Temperature:

+150 °C

Number of Elements per Chip:

1

Length:

6.6mm

Typical Gate Charge @ Vgs:

16.5 nC @ 10 V

Minimum Operating Temperature:

-55 °C

Height:

2.17mm

Forward Diode Voltage:

1.6V