N-Channel MOSFET, 1.15 A, 100 V, 3-Pin SOT-23 SI2328DS-T1-GE3

Channel Type:

N

Maximum Continuous Drain Current:

1.15 A

Maximum Drain Source Voltage:

100 V

Package Type:

SOT-23

Mounting Type:

Surface Mount

Pin Count:

3

Maximum Drain Source Resistance:

2.4 Ω

Channel Mode:

Enhancement

Minimum Gate Threshold Voltage:

2V

Maximum Power Dissipation:

1.25 W

Transistor Configuration:

Single

Maximum Gate Source Voltage:

-20 V, +20 V

Number of Elements per Chip:

1

Typical Gate Charge @ Vgs:

1.45 nC @ 10 V

Length:

3.04mm

Transistor Material:

Si

Width:

1.4mm

Maximum Operating Temperature:

+150 °C

Height:

1.02mm

Minimum Operating Temperature:

-55 °C