Dual P-Channel MOSFET, 3.1 A, 60 V, 8-Pin SOIC SI4948BEY-T1-GE3

Channel Type:

P

Maximum Continuous Drain Current:

3.1 A

Maximum Drain Source Voltage:

60 V

Package Type:

SOIC

Mounting Type:

Surface Mount

Pin Count:

8

Maximum Drain Source Resistance:

150 mΩ

Channel Mode:

Enhancement

Minimum Gate Threshold Voltage:

1V

Maximum Power Dissipation:

2.4 W

Transistor Configuration:

Isolated

Maximum Gate Source Voltage:

-20 V, +20 V

Number of Elements per Chip:

2

Width:

4mm

Typical Gate Charge @ Vgs:

14.5 nC @ 10 V

Maximum Operating Temperature:

+175 °C

Length:

5mm

Transistor Material:

Si

Height:

1.5mm

Minimum Operating Temperature:

-55 °C