Infineon SIPMOS® P-Channel MOSFET, 430 mA, 250 V, 3-Pin SOT-223 BSP317PH6327XTSA1

Infineon SIPMOS® P-Channel MOSFET, 430 mA, 250 V, 3-Pin SOT-223 BSP317PH6327XTSA1

Manufacturer:
Manufacturer Part No:
BSP317PH6327XTSA1
Enrgtech Part No:
ET16792541
Warranty:
Manufacturer
£ 0.1900
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Channel Type:
P
Maximum Continuous Drain Current:
430 mA
Maximum Drain Source Voltage:
250 V
Package Type:
SOT-223
Series:
SIPMOS®
Mounting Type:
Surface Mount
Pin Count:
3
Maximum Drain Source Resistance:
5 Ω
Channel Mode:
Enhancement
Maximum Gate Threshold Voltage:
2V
Minimum Gate Threshold Voltage:
1V
Maximum Power Dissipation:
1.8 W
Transistor Configuration:
Single
Maximum Gate Source Voltage:
-20 V, +20 V
Transistor Material:
Si
Width:
3.5mm
Number of Elements per Chip:
1
Typical Gate Charge @ Vgs:
11.6 nC @ 10 V
Length:
6.5mm
Maximum Operating Temperature:
+150 °C
Minimum Operating Temperature:
-55 °C
Height:
1.6mm
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0900766b8153827d.pdf(datasheets)
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0900766b81644fb2.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.



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