N-Channel MOSFET, 106 A, 75 V, 3-Pin D2PAK IRF3808STRLPBF

Channel Type:

N

Maximum Continuous Drain Current:

106 A

Maximum Drain Source Voltage:

75 V

Series:

HEXFET

Package Type:

D2PAK (TO-263)

Mounting Type:

Surface Mount

Pin Count:

3

Maximum Drain Source Resistance:

7.5 mΩ

Channel Mode:

Enhancement

Maximum Gate Threshold Voltage:

4V

Minimum Gate Threshold Voltage:

2V

Maximum Power Dissipation:

200 W

Transistor Configuration:

Single

Maximum Gate Source Voltage:

-20 V, +20 V

Width:

11.3mm

Number of Elements per Chip:

1

Typical Gate Charge @ Vgs:

150 nC @ 10 V

Length:

10.67mm

Maximum Operating Temperature:

+175 °C

Transistor Material:

Si

Forward Diode Voltage:

1.3V

Minimum Operating Temperature:

-55 °C

Height:

4.83mm