P-Channel MOSFET, 22 A, 20 V, 8-Pin PowerPAK 1212-8 SIS415DNT-T1-GE3

Channel Type:

P

Maximum Continuous Drain Current:

22 A

Maximum Drain Source Voltage:

20 V

Package Type:

PowerPAK 1212-8

Mounting Type:

Surface Mount

Pin Count:

8

Maximum Drain Source Resistance:

9.5 mΩ

Channel Mode:

Enhancement

Minimum Gate Threshold Voltage:

0.4V

Maximum Power Dissipation:

52 W

Transistor Configuration:

Single

Maximum Gate Source Voltage:

-12 V, +12 V

Transistor Material:

Si

Maximum Operating Temperature:

+150 °C

Number of Elements per Chip:

1

Length:

3.4mm

Typical Gate Charge @ Vgs:

117 nC @ 10 V

Width:

3.4mm

Height:

0.8mm

Minimum Operating Temperature:

-55 °C