


N-Channel Power MOSFET 60V to 80V, Infineon
The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

N-Channel MOSFET, 209 A, 75 V, 3-Pin TO-247AC IRFP2907PBF
Manufacturer:
Infineon
Manufacturer Part No:
IRFP2907PBF
Enrgtech Part No:
ET13987763
Warranty:
Manufacturer
£ 3.91
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Channel Type:
N
Maximum Continuous Drain Current:
209 A
Maximum Drain Source Voltage:
75 V
Package Type:
TO-247AC
Series:
HEXFET
Mounting Type:
Through Hole
Pin Count:
3
Maximum Drain Source Resistance:
5 mΩ
Channel Mode:
Enhancement
Maximum Gate Threshold Voltage:
4V
Minimum Gate Threshold Voltage:
2V
Maximum Power Dissipation:
470 W