P-Channel MOSFET, 18 A, 55 V, 3-Pin DPAK IRFR5505TRPBF

Channel Type:

P

Maximum Continuous Drain Current:

18 A

Maximum Drain Source Voltage:

55 V

Package Type:

DPAK (TO-252)

Series:

HEXFET

Mounting Type:

Surface Mount

Pin Count:

3

Maximum Drain Source Resistance:

110 mΩ

Channel Mode:

Enhancement

Maximum Gate Threshold Voltage:

4V

Minimum Gate Threshold Voltage:

2V

Maximum Power Dissipation:

57 W

Transistor Configuration:

Single

Maximum Gate Source Voltage:

-20 V, +20 V

Width:

6.22mm

Typical Gate Charge @ Vgs:

32 nC @ 10 V

Maximum Operating Temperature:

+150 °C

Number of Elements per Chip:

1

Length:

6.73mm

Transistor Material:

Si

Minimum Operating Temperature:

-55 °C

Height:

2.39mm