

The Infineon IRFHS8342 is strong IRFET power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.
Optimized for broadest availability from distribution partners
Product qualification according to JEDEC standard
Industry standard surface-mount power package
Low RDS(on) in a small package
Small outline
Wide availability from distribution partners
Industry standard qualification level
Standard pinout allows for drop in replacement
High power density
Compact form factor for space critical applications
Product qualification according to JEDEC standard
Industry standard surface-mount power package
Low RDS(on) in a small package
Small outline
Wide availability from distribution partners
Industry standard qualification level
Standard pinout allows for drop in replacement
High power density
Compact form factor for space critical applications

Dual N-Channel MOSFET Transistor & Diode, 8.8 A, 30 V, 8-Pin DFN2020 IRFHS8342TRPBF
Manufacturer:
Infineon
Manufacturer Part No:
IRFHS8342TRPBF
Enrgtech Part No:
ET21626934
Warranty:
Manufacturer
£ 0.10
Checking for live stock
Channel Type:
N
Maximum Continuous Drain Current:
8.8 A
Maximum Drain Source Voltage:
30 V
Package Type:
DFN2020
Series:
HEXFET
Mounting Type:
Surface Mount
Pin Count:
8
Maximum Drain Source Resistance:
0.016 O
Channel Mode:
Enhancement
Maximum Gate Threshold Voltage:
20V
Number of Elements per Chip:
2