N-Channel MOSFET, 12.7 A, 25 V, 8-Pin SOIC SI4116DY-T1-GE3

Channel Type:

N

Maximum Continuous Drain Current:

12.7 A

Maximum Drain Source Voltage:

25 V

Package Type:

SOIC

Mounting Type:

Surface Mount

Pin Count:

8

Maximum Drain Source Resistance:

9 mΩ

Channel Mode:

Enhancement

Minimum Gate Threshold Voltage:

0.6V

Maximum Power Dissipation:

2.5 W

Transistor Configuration:

Single

Maximum Gate Source Voltage:

-12 V, +12 V

Transistor Material:

Si

Width:

4mm

Maximum Operating Temperature:

+150 °C

Typical Gate Charge @ Vgs:

17.5 nC @ 4.5 V, 37 nC @ 10 V

Number of Elements per Chip:

1

Length:

5mm

Minimum Operating Temperature:

-55 °C

Height:

1.55mm