N-Channel MOSFET, 18 A, 100 V, 8-Pin SOIC SI4190ADY-T1-GE3

Channel Type:

N

Maximum Continuous Drain Current:

18 A

Maximum Drain Source Voltage:

100 V

Package Type:

SOIC

Mounting Type:

Surface Mount

Pin Count:

8

Maximum Drain Source Resistance:

2.2 Ω

Channel Mode:

Enhancement

Minimum Gate Threshold Voltage:

1.5V

Maximum Power Dissipation:

6 W

Transistor Configuration:

Single

Maximum Gate Source Voltage:

-20 V, +20 V

Transistor Material:

Si

Number of Elements per Chip:

1

Width:

4mm

Typical Gate Charge @ Vgs:

44.4 nC @ 10 V

Length:

5mm

Maximum Operating Temperature:

+150 °C

Minimum Operating Temperature:

-55 °C

Height:

1.5mm