

P-Channel Power MOSFET 30V, Infineon
Infineon's range of discrete HEXFET® power MOSFETs includes P-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

P-Channel MOSFET, 3 A, 30 V, 3-Pin SOT-23 IRLML5203TRPBF
Manufacturer:
Infineon
Manufacturer Part No:
IRLML5203TRPBF
Enrgtech Part No:
ET14041511
Warranty:
Manufacturer
£ 0.05
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Channel Type:
P
Maximum Continuous Drain Current:
3 A
Maximum Drain Source Voltage:
30 V
Series:
HEXFET
Package Type:
SOT-23
Mounting Type:
Surface Mount
Pin Count:
3
Maximum Drain Source Resistance:
165 mΩ
Channel Mode:
Enhancement
Maximum Gate Threshold Voltage:
2.5V
Minimum Gate Threshold Voltage:
1V
Maximum Power Dissipation:
1.25 W