


Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor
Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild’s proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.

N-Channel MOSFET, 14 A, 50 V, 3-Pin DPAK RFD14N05LSM9A
Manufacturer:
onsemi
Manufacturer Part No:
RFD14N05LSM9A
Enrgtech Part No:
ET14543694
Warranty:
Manufacturer
£ 0.54
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Channel Type:
N
Maximum Continuous Drain Current:
14 A
Maximum Drain Source Voltage:
50 V
Package Type:
DPAK (TO-252)
Mounting Type:
Surface Mount
Pin Count:
3
Maximum Drain Source Resistance:
100 mΩ
Channel Mode:
Enhancement
Minimum Gate Threshold Voltage:
1V
Maximum Power Dissipation:
48 W
Transistor Configuration:
Single
Maximum Gate Source Voltage:
-10 V, +10 V