Enhancement Mode Dual MOSFET, Fairchild Semiconductor
Enhancement Mode Field Effect Transistors are produced using Fairchild’s proprietary, high cell density, DMOS technology. This very high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.
Dual N-Channel MOSFET, 115 mA, 60 V, 6-Pin SOT-363 2N7002DW
£ 0.24
Checking for live stock
Channel Type:
N
Maximum Continuous Drain Current:
115 mA
Maximum Drain Source Voltage:
60 V
Package Type:
SOT-363
Mounting Type:
Surface Mount
Pin Count:
6
Maximum Drain Source Resistance:
13.5 Ω
Channel Mode:
Enhancement
Minimum Gate Threshold Voltage:
1V
Maximum Power Dissipation:
200 mW
Transistor Configuration:
Isolated
Maximum Gate Source Voltage:
-20 V, +20 V
