Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor
Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild’s proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.
N-Channel MOSFET, 1.7 A, 30 V, 3-Pin SOT-23 NDS355AN
£ 0.14
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Channel Type:
N
Maximum Continuous Drain Current:
1.7 A
Maximum Drain Source Voltage:
30 V
Package Type:
SOT-23
Mounting Type:
Surface Mount
Pin Count:
3
Maximum Drain Source Resistance:
230 mΩ
Channel Mode:
Enhancement
Minimum Gate Threshold Voltage:
1V
Maximum Power Dissipation:
500 mW
Transistor Configuration:
Single
Maximum Gate Source Voltage:
-20 V, +20 V
