


Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor
Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild’s proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.

N-Channel MOSFET, 1.3 A, 20 V, 3-Pin SOT-23 NDS331N
Manufacturer:
onsemi
Manufacturer Part No:
NDS331N
Enrgtech Part No:
ET14540321
Warranty:
Manufacturer
£ 0.11
Checking for live stock
Channel Type:
N
Maximum Continuous Drain Current:
1.3 A
Maximum Drain Source Voltage:
20 V
Package Type:
SOT-23
Mounting Type:
Surface Mount
Pin Count:
3
Maximum Drain Source Resistance:
160 mΩ
Channel Mode:
Enhancement
Minimum Gate Threshold Voltage:
0.5V
Maximum Power Dissipation:
500 mW
Transistor Configuration:
Single
Maximum Gate Source Voltage:
+8 V