Deliver to United Kingdom

Oops! We're currently experiencing technical difficulties with our checkout process. For assistance, please contact support at info@enrgtechglobal.com.

bsz100n06ls3gatma1 N-Channel MOSFET, 20 A, 60 V, 8-Pin TDSON Infineon BSZ100N06LS3GATMA1
bsz100n06ls3gatma1 N-Channel MOSFET, 20 A, 60 V, 8-Pin TDSON Infineon BSZ100N06LS3GATMA1
bsz100n06ls3gatma1 N-Channel MOSFET, 20 A, 60 V, 8-Pin TDSON Infineon BSZ100N06LS3GATMA1
Infineon OptiMOS™3 Power MOSFETs, 60 to 80V OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications. Fast switching MOSFET for SMPS
Optimized technology for DC/DC converters
Qualified according to JEDEC1) for target applications
N-channel, logic level
Excellent gate charge x R DS(on) product (FOM)
Very low on-resistance R DS(on)
Pb-free plating
Infineon

N-Channel MOSFET, 20 A, 60 V, 8-Pin TDSON BSZ100N06LS3GATMA1

Manufacturer:
Infineon
Manufacturer Part No:
BSZ100N06LS3GATMA1
Enrgtech Part No:
ET16792614
Warranty:
Manufacturer
£ 0.20

Checking for live stock

Channel Type:

N

Maximum Continuous Drain Current:

20 A

Maximum Drain Source Voltage:

60 V

Series:

OptiMOS™ 3

Package Type:

TDSON

Mounting Type:

Surface Mount

Pin Count:

8

Maximum Drain Source Resistance:

17.9 mΩ

Channel Mode:

Enhancement

Maximum Gate Threshold Voltage:

2.2V

Minimum Gate Threshold Voltage:

1.7V

Maximum Power Dissipation:

2.1 W

Related products