N-Channel MOSFET, 18 A, 60 V, 3-Pin DPAK RFD12N06RLESM9A

Channel Type:

N

Maximum Continuous Drain Current:

18 A

Maximum Drain Source Voltage:

60 V

Package Type:

DPAK (TO-252)

Series:

UltraFET

Mounting Type:

Surface Mount

Pin Count:

3

Maximum Drain Source Resistance:

75 mΩ

Channel Mode:

Enhancement

Minimum Gate Threshold Voltage:

1V

Maximum Power Dissipation:

49 W

Transistor Configuration:

Single

Maximum Gate Source Voltage:

-16 V, +16 V

Length:

6.73mm

Transistor Material:

Si

Typical Gate Charge @ Vgs:

12 nC @ 10 V

Maximum Operating Temperature:

+175 °C

Number of Elements per Chip:

1

Width:

6.22mm

Minimum Operating Temperature:

-55 °C

Height:

2.39mm