N-Channel MOSFET, 5 A, 650 V, 3-Pin IPAK STD5NM60T4

Channel Type:

N

Maximum Continuous Drain Current:

5 A

Maximum Drain Source Voltage:

650 V

Package Type:

IPAK (TO-251)

Mounting Type:

Through Hole

Pin Count:

3

Maximum Drain Source Resistance:

1 Ω

Channel Mode:

Enhancement

Maximum Gate Threshold Voltage:

5V

Minimum Gate Threshold Voltage:

4V

Maximum Power Dissipation:

96 W

Transistor Configuration:

Single

Maximum Gate Source Voltage:

±30 V

Typical Gate Charge @ Vgs:

13 nC @ 10 V

Length:

6.6mm

Maximum Operating Temperature:

+150 °C

Number of Elements per Chip:

1

Width:

2.4mm

Minimum Operating Temperature:

-55 °C

Forward Diode Voltage:

1.5V

Height:

6.2mm