N-Channel MOSFET, 120 mA, 600 V Depletion, 3-Pin SOT-223 BSP135H6327XTSA1

Channel Type:

N

Maximum Continuous Drain Current:

120 mA

Maximum Drain Source Voltage:

600 V

Series:

SIPMOS®

Package Type:

SOT-223

Mounting Type:

Surface Mount

Pin Count:

3

Maximum Drain Source Resistance:

60 Ω

Channel Mode:

Depletion

Maximum Gate Threshold Voltage:

1V

Minimum Gate Threshold Voltage:

2.1V

Maximum Power Dissipation:

1.8 W

Transistor Configuration:

Single

Maximum Gate Source Voltage:

-20 V, +20 V

Transistor Material:

Si

Number of Elements per Chip:

1

Width:

3.5mm

Length:

6.5mm

Typical Gate Charge @ Vgs:

3.7 nC @ 5 V

Maximum Operating Temperature:

+150 °C

Automotive Standard:

AEC-Q101

Height:

1.6mm

Minimum Operating Temperature:

-55 °C

Forward Diode Voltage:

1.2V