P-Channel MOSFET, 530 mA, 150 V, 3-Pin SOT-23 SI2325DS-T1-E3

Channel Type:

P

Maximum Continuous Drain Current:

530 mA

Maximum Drain Source Voltage:

150 V

Package Type:

SOT-23

Mounting Type:

Surface Mount

Pin Count:

3

Maximum Drain Source Resistance:

1.2 Ω

Channel Mode:

Enhancement

Minimum Gate Threshold Voltage:

2.5V

Maximum Power Dissipation:

750 mW

Transistor Configuration:

Single

Maximum Gate Source Voltage:

-20 V, +20 V

Length:

3.04mm

Width:

1.4mm

Transistor Material:

Si

Maximum Operating Temperature:

+150 °C

Typical Gate Charge @ Vgs:

7.7 nC @ 10 V

Number of Elements per Chip:

1

Height:

1.02mm

Minimum Operating Temperature:

-55 °C