P-Channel MOSFET, 4.2 A, 100 V, 3-Pin DPAK SPD04P10PLGBTMA1

Channel Type:

P

Maximum Continuous Drain Current:

4.2 A

Maximum Drain Source Voltage:

100 V

Package Type:

DPAK (TO-252)

Series:

SIPMOS®

Mounting Type:

Surface Mount

Pin Count:

3

Maximum Drain Source Resistance:

1.05 Ω

Channel Mode:

Enhancement

Maximum Gate Threshold Voltage:

2V

Minimum Gate Threshold Voltage:

1V

Maximum Power Dissipation:

38 W

Transistor Configuration:

Single

Maximum Gate Source Voltage:

-20 V, +20 V

Width:

6.22mm

Length:

6.73mm

Typical Gate Charge @ Vgs:

12 nC @ 10 V

Transistor Material:

Si

Number of Elements per Chip:

1

Maximum Operating Temperature:

+175 °C

Height:

2.41mm

Minimum Operating Temperature:

-55 °C