Infineon OptiMOS™ T2 Power MOSFETs
Infineon’s new OptiMOS ™ -T2 has a range of energy efficient MOSFET transistors with CO2 reduction and electric drives. The new OptiMOS™ -T2 product family extends the existing families of OptiMOS™ -T and OptiMOS™.
OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.
N-channel - Enhancement mode
AEC qualified
MSL1 up to 260°C peak reflow
175°C operating temperature
Green Product (RoHS compliant)
OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.
N-channel - Enhancement mode
AEC qualified
MSL1 up to 260°C peak reflow
175°C operating temperature
Green Product (RoHS compliant)
N-Channel MOSFET, 80 A, 60 V, 3-Pin D2PAK IPB80N06S4L05ATMA2
Manufacturer:
Infineon
Manufacturer Part No:
IPB80N06S4L05ATMA2
Enrgtech Part No:
ET10058565
Warranty:
Manufacturer
£ 1.38
Checking for live stock
Channel Type:
N
Maximum Continuous Drain Current:
80 A
Maximum Drain Source Voltage:
60 V
Series:
OptiMOS™ -T2
Package Type:
D2PAK (TO-263)
Mounting Type:
Surface Mount
Pin Count:
3
Maximum Drain Source Resistance:
8.5 mΩ
Channel Mode:
Enhancement
Maximum Gate Threshold Voltage:
2V
Minimum Gate Threshold Voltage:
1.2V
Maximum Power Dissipation:
107 W
