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ipb17n25s3100atma1 N-Channel MOSFET, 17 A, 250 V, 3-Pin D2PAK Infineon IPB17N25S3100ATMA1
ipb17n25s3100atma1 N-Channel MOSFET, 17 A, 250 V, 3-Pin D2PAK Infineon IPB17N25S3100ATMA1
ipb17n25s3100atma1 N-Channel MOSFET, 17 A, 250 V, 3-Pin D2PAK Infineon IPB17N25S3100ATMA1
Infineon OptiMOS™T Power MOSFETs OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.
N-channel - Enhancement mode
Automotive AEC Q101 qualified
MSL1 up to 260°C peak reflow
175°C operating temperature
Green product (RoHS compliant)
Infineon

N-Channel MOSFET, 17 A, 250 V, 3-Pin D2PAK IPB17N25S3100ATMA1

Manufacturer:
Infineon
Manufacturer Part No:
IPB17N25S3100ATMA1
Enrgtech Part No:
ET16793137
Warranty:
Manufacturer
£ 1.15

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Channel Type:

N

Maximum Continuous Drain Current:

17 A

Maximum Drain Source Voltage:

250 V

Series:

OptiMOS™-T

Package Type:

D2PAK (TO-263)

Mounting Type:

Surface Mount

Pin Count:

3

Maximum Drain Source Resistance:

100 mΩ

Channel Mode:

Enhancement

Maximum Gate Threshold Voltage:

4V

Minimum Gate Threshold Voltage:

2V

Maximum Power Dissipation:

107 W

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