Dual N/P-Channel-Channel MOSFET, 2.3 A, 3.5 A, 30 V, 8-Pin SOIC IRF9952TRPBF

Channel Type:

N, P

Maximum Continuous Drain Current:

2.3 A, 3.5 A

Maximum Drain Source Voltage:

30 V

Series:

HEXFET

Package Type:

SOIC

Mounting Type:

Surface Mount

Pin Count:

8

Maximum Drain Source Resistance:

150 mΩ, 400 mΩ

Channel Mode:

Enhancement

Maximum Gate Threshold Voltage:

1V

Minimum Gate Threshold Voltage:

1V

Maximum Power Dissipation:

2 W

Transistor Configuration:

Isolated

Maximum Gate Source Voltage:

-20 V, +20 V

Typical Gate Charge @ Vgs:

6.1 nC @ 10 V, 6.9 nC @ 10 V

Length:

5mm

Transistor Material:

Si

Width:

4mm

Maximum Operating Temperature:

+150 °C

Number of Elements per Chip:

2

Minimum Operating Temperature:

-55 °C

Height:

1.5mm