Infineon HEXFET N-Channel MOSFET, 300 A, 60 V, 7-Pin D2PAK-7 IRLS3036TRL7PP

Infineon HEXFET N-Channel MOSFET, 300 A, 60 V, 7-Pin D2PAK-7 IRLS3036TRL7PP

Manufacturer:
Manufacturer Part No:
IRLS3036TRL7PP
Enrgtech Part No:
ET16793739
Warranty:
Manufacturer
£ 1.4100
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Channel Type:
N
Maximum Continuous Drain Current:
300 A
Maximum Drain Source Voltage:
60 V
Package Type:
D2PAK-7
Series:
HEXFET
Mounting Type:
Surface Mount
Pin Count:
7
Maximum Drain Source Resistance:
2.2 mΩ
Channel Mode:
Enhancement
Maximum Gate Threshold Voltage:
2.5V
Minimum Gate Threshold Voltage:
1V
Maximum Power Dissipation:
380 W
Maximum Gate Source Voltage:
-16 V, +16 V
Length:
10.67mm
Width:
4.83mm
Maximum Operating Temperature:
+175 °C
Number of Elements per Chip:
1
Typical Gate Charge @ Vgs:
110 nC @ 4.5 V
Height:
9.65mm
Forward Diode Voltage:
1.3V
Minimum Operating Temperature:
-55 °C
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0900766b81560d45.pdf(datasheets)
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0900766b81644fb4.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.



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