Logic- and Standard Level MOSFETs in a variety of packages. Sample our robust and easy-to-use MOSFETs in the 40 V to 60 V range. They are perfect for space- and power-critical applications, delivering excellent switching performance and class-leading safe operating area (SOA).
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology
Low threshold voltage
Very fast switching
Trench MOSFET technology
ElectroStatic Discharge (ESD) protection > 3 kV HBM
Relay driver
High-speed line driver
Low-side loadswitch
Switching circuits
Very fast switching
Trench MOSFET technology
ElectroStatic Discharge (ESD) protection > 3 kV HBM
Relay driver
High-speed line driver
Low-side loadswitch
Switching circuits
N-Channel MOSFET, 335 mA, 55 V, 3-Pin SOT-23 BSH111BKR
Manufacturer:
Nexperia
Manufacturer Part No:
BSH111BKR
Enrgtech Part No:
ET16799737
Warranty:
Manufacturer
£ 0.03
Checking for live stock
Channel Type:
N
Maximum Continuous Drain Current:
335 mA
Maximum Drain Source Voltage:
55 V
Series:
BSH111BK
Package Type:
TO-236
Mounting Type:
Surface Mount
Pin Count:
3
Maximum Drain Source Resistance:
8.1 Ω
Channel Mode:
Enhancement
Maximum Gate Threshold Voltage:
1.3V
Minimum Gate Threshold Voltage:
0.6V
Maximum Power Dissipation:
1.45 W
