N-Channel MOSFET, 150 A, 80 V, 3-Pin D2PAK SUM60020E-GE3

Channel Type:

N

Maximum Continuous Drain Current:

150 A

Maximum Drain Source Voltage:

80 V

Package Type:

D2PAK (TO-263)

Mounting Type:

Surface Mount

Pin Count:

3

Maximum Drain Source Resistance:

2.4 mΩ

Channel Mode:

Enhancement

Maximum Gate Threshold Voltage:

4V

Minimum Gate Threshold Voltage:

2V

Maximum Power Dissipation:

375 W

Transistor Configuration:

Single

Maximum Gate Source Voltage:

±20 V

Maximum Operating Temperature:

+175 °C

Length:

10.41mm

Width:

9.65mm

Number of Elements per Chip:

1

Typical Gate Charge @ Vgs:

151.2 nC @ 10 V

Minimum Operating Temperature:

-55 °C

Height:

4.57mm

Forward Diode Voltage:

1.5V