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pmxb120epez P-Channel MOSFET, 2.4 A, 30 V, 4-Pin DFN1010D-3, SOT1215 Nexperia PMXB120EPEZ
pmxb120epez P-Channel MOSFET, 2.4 A, 30 V, 4-Pin DFN1010D-3, SOT1215 Nexperia PMXB120EPEZ
P-channel MOSFETs, The perfect fit for your design when N-channels simply aren’t suitable, Our extensive MOSFET catalog also includes many P-channel device families, based on Nexperia’s leading Trench technology. Rated from 12 V to 70 V and housed in low- and medium-power packages, they offer our familiar blend of high efficiency and high reliability. 30 V, P-channel Trench MOSFET, P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Trench MOSFET technology
Leadless ultra small and ultra thin SMD plastic package: 1.1 x 1.0 x 0.37 mm
Exposed drain pad for excellent thermal conduction
ElectroStatic Discharge (ESD) protection 1 kV HBM
Drain-source on-state resistance RDSon = 350 mΩ
Nexperia

P-Channel MOSFET, 2.4 A, 30 V, 4-Pin DFN1010D-3, SOT1215 PMXB120EPEZ

Manufacturer:
Nexperia
Manufacturer Part No:
PMXB120EPEZ
Enrgtech Part No:
ET16800568
Warranty:
Manufacturer
£ 0.07

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Channel Type:

P

Maximum Continuous Drain Current:

2.4 A

Maximum Drain Source Voltage:

30 V

Package Type:

DFN1010D-3, SOT1215

Mounting Type:

Surface Mount

Pin Count:

4

Maximum Drain Source Resistance:

187 mΩ

Channel Mode:

Enhancement

Maximum Gate Threshold Voltage:

-2.5V

Minimum Gate Threshold Voltage:

-1V

Maximum Power Dissipation:

8.33 W

Transistor Configuration:

Single

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