N-Channel MOSFET, 100 A, 40 V, 3-Pin DPAK SQD40020EL_GE3

Channel Type:

N

Maximum Continuous Drain Current:

100 A

Maximum Drain Source Voltage:

40 V

Package Type:

DPAK (TO-252)

Mounting Type:

Surface Mount

Pin Count:

3

Maximum Drain Source Resistance:

4.2 mΩ

Channel Mode:

Enhancement

Maximum Gate Threshold Voltage:

2.2V

Minimum Gate Threshold Voltage:

1.2V

Maximum Power Dissipation:

107 W

Transistor Configuration:

Single

Maximum Gate Source Voltage:

±20 V

Maximum Operating Temperature:

+175 °C

Width:

9.65mm

Number of Elements per Chip:

1

Length:

10.41mm

Typical Gate Charge @ Vgs:

108 nC @ 10 V

Minimum Operating Temperature:

-55 °C

Automotive Standard:

AEC-Q101

Height:

4.57mm

Forward Diode Voltage:

1.5V