PTVSxS1 Series, 400W Transient Voltage Suppressors, Nexperia 400W Unidirectional Transient Voltage Suppressor (TVS) in a SOD123W small and flat lead low-profile Surface-Mounted Device (SMD) plastic package, designed for transient overvoltage protection.

Zener Diodes 550mW, BZX84J Series, Nexperia The BZX84J series of Zener diodes, from NXP, are general purpose devices. These single Zener diodes are in a SOD323F (SC-90) package. This plastic package is very small and flat lead surface mount (SMD). The BZX84J series are ideal for general regulation functions. - Non-repetitive peak reverse power dissipation: 40mW- Total power dissipation: 550mW- Small plastic package for suface-mount designs- Wide working voltage range: nominal 2.4V to 75V (E24 range)- Two tolerance series: 2% and 5%- Low differential resistance

N-Channel MOSFET, 60V to 80V, Nexperia

4000 Series Inverters & Buffers, Nexperia

Small Signal NPN Transistors

The Nexperia N-channel enhancement mode Field-Effect Transistor (FET) in an MLPAK33 (SOT8002) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Logic-level compatibleTrench MOSFET technologyUltra low QG and QGD for high system efficiency, especially at higher switching frequenciesSuperfast switching with soft-recoveryLow spiking and ringing for low EMI designsMLPAK33 package (3.3 x 3.3 mm footprint)

The Nexperia NPN high power bipolar transistor is in a power DPAK, TO-252 (SOT428C) Surface-Mounted Device (SMD) plastic package. High thermal power dissipation capabilityHigh energy efficiency due to less heat generationElectrically similar to popular MJD148 seriesLow collector emitter saturation voltageFast switching speedsQualified according to AEC-Q101 and recommended for use in automotive applications

The Nexperia general-purpose zener diodes is in an ultra small SOD882BD (DFN1006BD-2) leadless Surface Mounted Device (SMD) plastic package with side-wettable flanks. Two tolerance series ± 2 % and approximately ± 5 %Wide working voltage range nominal 2.4 V to 75 V (E24 range)Qualified according to AEC-Q101 and recommended for use in automotive applications

Schottky Barrier Diodes, 200mA to 500mA High efficiencyUltra-small, low-profile surface-mount packagesOptimized for Low forward voltage drop and high junction temperatureLow capacitanceNegligible power switching lossesLow leakage current

Dual retriggerable monostable multivibrator with reset, The 74HC123-Q100, 74HCT123-Q100 are high-speed Si-gate CMOS devices and are pin compatible with Low-power Schottky TTL (LSTTL). They are specified in compliance with JEDEC standard no. 7A. The 74HC123-Q100, 74HCT123-Q100 are dual retriggerable monostable multivibrators with output pulse width control by three methods, The basic pulse is defined by the selection of the external resistor (REXT) and capacitor (CEXT). Once triggered, the basic output pulse width may be extended by retriggering the gated active LOW-going edge input (nA) or the active HIGH-going edge input (nB). Automotive product qualification in accordance with AEC-Q100 (Grade 1)DC triggered from active HIGH or active LOW inputsRetriggerable for very long pulses up to 100 % duty factorDirect reset terminates output pulseSchmitt trigger action on all inputs except for the reset input

Voltage regulator diodes, Low-power voltage regulator diodes in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. The diodes are available in the normalized E24 ±1 % (BZX84-A), ±2 % (BZX84-B) and approximately ±5 % (BZX84-C) tolerance range. The series includes 37 breakdown voltages with nominal working voltages from 2.4Vto75 V. Total power dissipation: ≤ 250 mWThree tolerance series: ±1%, ±2% and approximately ±5%AEC-Q101 qualifiedWorking voltage range: nominal 2.4 V to 75 V (E24 range)Non-repetitive peak reverse power dissipation: ≤ 40 W

N-channel MOSFETs 25 V - 30 V, Robust performance thanks to advanced technology know-how, Easy-to-use MOSFETs in the 25 V to 30 V range. Perfect for space- and power-critical applications, they offer excellent switching performance and class-leading safe operating area (SOA). Need a different voltage rating? Check out the rest of our huge portfolio for more options. 30 V, N-channel Trench MOSFET, N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Trench MOSFET technologyLeadless ultra small and thin SMD plastic package: 1.1 x 1.0 x 0.37 mmExposed drain pad for excellent thermal conductionVery low Drain-Source on-state resistance RDSon = 49 mΩVery fast switchingLow-side load switch and charging switch for portable devicesPower management in battery-driven portablesLED driverDC-to-DC converters