N-channel MOSFETs 25 V - 30 V, Robust performance thanks to advanced technology know-how, Easy-to-use MOSFETs in the 25 V to 30 V range. Perfect for space- and power-critical applications, they offer excellent switching performance and class-leading safe operating area (SOA). Need a different voltage rating? Check out the rest of our huge portfolio for more options.
30 V, N-channel Trench MOSFET, N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Trench MOSFET technology
Leadless ultra small and thin SMD plastic package: 1.1 x 1.0 x 0.37 mm
Exposed drain pad for excellent thermal conduction
Very low Drain-Source on-state resistance RDSon = 49 mΩ
Very fast switching
Low-side load switch and charging switch for portable devices
Power management in battery-driven portables
LED driver
DC-to-DC converters
Leadless ultra small and thin SMD plastic package: 1.1 x 1.0 x 0.37 mm
Exposed drain pad for excellent thermal conduction
Very low Drain-Source on-state resistance RDSon = 49 mΩ
Very fast switching
Low-side load switch and charging switch for portable devices
Power management in battery-driven portables
LED driver
DC-to-DC converters
N-Channel MOSFET, 3.2 A, 30 V, 4-Pin DFN1010D-3 PMXB56ENZ
£ 0.23
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Channel Type:
N
Maximum Continuous Drain Current:
3.2 A
Maximum Drain Source Voltage:
30 V
Package Type:
DFN1010D-3
Mounting Type:
Surface Mount
Pin Count:
4
Maximum Drain Source Resistance:
87 mΩ
Channel Mode:
Enhancement
Maximum Gate Threshold Voltage:
2V
Minimum Gate Threshold Voltage:
1V
Maximum Power Dissipation:
8.33 W
Transistor Configuration:
Single
