

The Infineon CoolMOS 7th generation platform is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction (SJ) principle and pioneered by Infineon Technologies. The 600V CoolMOS P7 series is the successor to the CoolMOS P6 series. It combines the benefits of a fast switching SJ MOSFET with excellent ease of use, e.g. very low ringing tendency, outstanding robustness of body diode against hard commutation and excellent ESD capability. Furthermore, extremely low switching and conduction losses make switching applications even more efficient, more compact and much cooler.
Excellent ESD robustness >2kV (HBM) for all products
Suitable for hard and soft switching due to an outstanding commutation ruggedness
Suitable for hard and soft switching due to an outstanding commutation ruggedness

N-Channel MOSFET, 18 A, 600 V, 3-Pin TO-220 FP IPA60R180P7SXKSA1
Manufacturer:
Infineon
Manufacturer Part No:
IPA60R180P7SXKSA1
Enrgtech Part No:
ET21606517
Warranty:
Manufacturer
£ 0.48
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Channel Type:
N
Maximum Continuous Drain Current:
18 A
Maximum Drain Source Voltage:
600 V
Series:
CoolMOS™ P7
Package Type:
TO-220 FP
Mounting Type:
Through Hole
Pin Count:
3
Maximum Drain Source Resistance:
0.18 O
Channel Mode:
Enhancement
Maximum Gate Threshold Voltage:
4V
Number of Elements per Chip:
1
Transistor Material:
Si