N-Channel MOSFET, 2.3 A, 20 V, 3-Pin SOT-23 BSS806NH6327XTSA1

Channel Type:

N

Maximum Continuous Drain Current:

2.3 A

Maximum Drain Source Voltage:

20 V

Series:

OptiMOS™ 2

Package Type:

SOT-23

Mounting Type:

Surface Mount

Pin Count:

3

Maximum Drain Source Resistance:

82 mΩ

Channel Mode:

Enhancement

Maximum Gate Threshold Voltage:

0.75V

Minimum Gate Threshold Voltage:

0.3V

Maximum Power Dissipation:

500 mW

Transistor Configuration:

Single

Maximum Gate Source Voltage:

-8 V, +8 V

Maximum Operating Temperature:

+150 °C

Typical Gate Charge @ Vgs:

1.7 nC @ 2.5 V

Length:

2.9mm

Number of Elements per Chip:

1

Width:

1.3mm

Transistor Material:

Si

Automotive Standard:

AEC-Q101

Minimum Operating Temperature:

-55 °C

Height:

1mm

Forward Diode Voltage:

1.1V