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sihb080n60e-ge3 Vishay SIHB Type N-Channel MOSFET, 35 A, 600 V Enhancement, 3-Pin TO-263 SIHB080N60E-GE3
sihb080n60e-ge3 Vishay SIHB Type N-Channel MOSFET, 35 A, 600 V Enhancement, 3-Pin TO-263 SIHB080N60E-GE3
sihb080n60e-ge3 Vishay SIHB Type N-Channel MOSFET, 35 A, 600 V Enhancement, 3-Pin TO-263 SIHB080N60E-GE3

Vishay SIHB Type N-Channel MOSFET, 35 A, 600 V Enhancement, 3-Pin TO-263 SIHB080N60E-GE3

Vishay SIHB Type N-Channel MOSFET, 35 A, 600 V Enhancement, 3-Pin TO-263 SIHB080N60E-GE3

Manufacturer:
Vishay
Manufacturer Part No:
SIHB080N60E-GE3
Enrgtech Part No:
ET26056153
Warranty:
Manufacturer
1000 - In Stock

Ships in 2-3 business days

Each

Quantity
Unit Price (ex VAT)
50
£ 2.61
100
£ 2.14
500
£ 2.01
Order Today!
From: United Kingdom
Est Ship Date: 24 Aug, 2026
Est Fastest Delivery: 25 Aug, 2026
Length:
10.67mm
Series:
SIHB
Pin Count:
3
Mount Type:
Surface
Channel Mode:
Enhancement
Channel Type:
Type N
Package Type:
TO-263
Product Type:
MOSFET
Forward Voltage Vf:
1.2V
Automotive Standard:
No
Standards/Approvals:
RoHS
Maximum Power Dissipation Pd:
ZNR
Typical Gate Charge Qg @ Vgs:
8.38mm
Maximum Operating Temperature:
150°C
Minimum Operating Temperature:
-55°C
Maximum Gate Source Voltage Vgs:
3.4Mbit/s
Maximum Drain Source Voltage Vds:
600V
Maximum Continuous Drain Current Id:
35A
Maximum Drain Source Resistance Rds:
0.08Ω
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.
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