The Vishay power MOSFET with fast body diode and 4th generation E series technology has reduced switching and conduction losses and it is used in applications such as switch mode power supplies, server power supplies and power factor correction power supp
Low effective capacitance
Avalanche energy rated
Low figure of merit
Avalanche energy rated
Low figure of merit
Dual Silicon N-Channel MOSFET, 35 A, 600 V, 3-Pin D2PAK SIHB080N60E-GE3
Manufacturer:
Vishay
Manufacturer Part No:
SIHB080N60E-GE3
Enrgtech Part No:
ET26056153
Warranty:
Manufacturer
£ 1.88
Checking for live stock
Channel Type:
N
Maximum Continuous Drain Current:
35 A
Maximum Drain Source Voltage:
600 V
Package Type:
TO-263
Mounting Type:
Surface Mount
Pin Count:
3
Channel Mode:
Enhancement
Transistor Material:
Silicon
Number of Elements per Chip:
2
