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ipb80p03p405atma1 P-Channel MOSFET, 80 A, 30 V, 3-Pin D2PAK Infineon IPB80P03P405ATMA1
ipb80p03p405atma1 P-Channel MOSFET, 80 A, 30 V, 3-Pin D2PAK Infineon IPB80P03P405ATMA1
ipb80p03p405atma1 P-Channel MOSFET, 80 A, 30 V, 3-Pin D2PAK Infineon IPB80P03P405ATMA1
Infineon OptiMOS™P P-Channel Power MOSFETs The Infineon OptiMOS™ P-Channel power MOSFETs are designed to give enhanced features meeting quality performances. Features include ultra-low switching loss, on-state resistance, Avalanche ratings as well as being AEC qualified for automotive solutions. Applications include dc-dc, motor control, automotive and eMobility.
Enhancement mode
Avalanche rated
Low switching and conduction power losses
Pb-free lead plating; RoHS compliant
Standard packages
OptiMOS™ P-Channel Series: Temperature range from -55°C to +175°C
Infineon

P-Channel MOSFET, 80 A, 30 V, 3-Pin D2PAK IPB80P03P405ATMA1

Manufacturer:
Infineon
Manufacturer Part No:
IPB80P03P405ATMA1
Enrgtech Part No:
ET16893696
Warranty:
Manufacturer
£ 0.99

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Channel Type:

P

Maximum Continuous Drain Current:

80 A

Maximum Drain Source Voltage:

30 V

Package Type:

D2PAK (TO-263)

Series:

OptiMOS P

Mounting Type:

Surface Mount

Pin Count:

3

Maximum Drain Source Resistance:

5 mΩ

Channel Mode:

Enhancement

Maximum Gate Threshold Voltage:

4V

Minimum Gate Threshold Voltage:

2V

Maximum Power Dissipation:

137 W

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