Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor
Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild’s proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.
N-Channel MOSFET, 7.2 A, 30 V, 3-Pin SOT-223 NDT451AN
Manufacturer:
onsemi
Manufacturer Part No:
NDT451AN
Enrgtech Part No:
ET14540381
Warranty:
Manufacturer
£ 0.32
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Channel Type:
N
Maximum Continuous Drain Current:
7.2 A
Maximum Drain Source Voltage:
30 V
Package Type:
SOT-223
Mounting Type:
Surface Mount
Pin Count:
3
Maximum Drain Source Resistance:
90 mΩ
Channel Mode:
Enhancement
Minimum Gate Threshold Voltage:
1V
Maximum Power Dissipation:
3 W
Transistor Configuration:
Single
Maximum Gate Source Voltage:
-20 V, +20 V
