P-Channel MOSFET, 8 A, 30 V, 8-Pin SO-8 SI4435DYTRPBF

Channel Type:

P

Maximum Continuous Drain Current:

8 A

Maximum Drain Source Voltage:

30 V

Series:

Si4435DYPbF

Package Type:

SO-8

Mounting Type:

Surface Mount

Pin Count:

8

Maximum Drain Source Resistance:

35 mΩ

Channel Mode:

Enhancement

Minimum Gate Threshold Voltage:

1V

Maximum Power Dissipation:

2.5 W

Transistor Configuration:

Single

Maximum Gate Source Voltage:

20 V

Number of Elements per Chip:

1

Width:

4mm

Length:

5mm

Maximum Operating Temperature:

+150 °C

Typical Gate Charge @ Vgs:

40 nC @ 10 V

Height:

1.5mm

Forward Diode Voltage:

1.2V

Minimum Operating Temperature:

-55 °C