SiC N-Channel MOSFET, 63 A, 1200 V, 4-Pin TO-247-4 C3M0032120K

Channel Type:

N

Maximum Continuous Drain Current:

63 A

Maximum Drain Source Voltage:

1200 V

Package Type:

TO-247-4

Mounting Type:

Through Hole

Pin Count:

4

Maximum Drain Source Resistance:

32 mΩ

Channel Mode:

Enhancement

Maximum Gate Threshold Voltage:

3.6V

Minimum Gate Threshold Voltage:

1.8V

Maximum Power Dissipation:

283 W

Transistor Configuration:

Single

Maximum Gate Source Voltage:

-8 V, 19 V

Length:

16.13mm

Transistor Material:

SiC

Width:

5.21mm

Number of Elements per Chip:

1

Maximum Operating Temperature:

+175 °C

Typical Gate Charge @ Vgs:

118 nC @ 4/15V

Minimum Operating Temperature:

-40 °C

Height:

23.6mm