N-Channel MOSFET, 4.1 A, 800 V, 3-Pin TO-220AB IRFBE30PBF

Channel Type:

N

Maximum Continuous Drain Current:

4.1 A

Maximum Drain Source Voltage:

800 V

Package Type:

TO-220AB

Mounting Type:

Through Hole

Pin Count:

3

Maximum Drain Source Resistance:

3 Ω

Channel Mode:

Enhancement

Minimum Gate Threshold Voltage:

2V

Maximum Power Dissipation:

125 W

Transistor Configuration:

Single

Maximum Gate Source Voltage:

-20 V, +20 V

Typical Gate Charge @ Vgs:

78 nC @ 10 V

Transistor Material:

Si

Maximum Operating Temperature:

+150 °C

Number of Elements per Chip:

1

Width:

4.7mm

Length:

10.41mm

Minimum Operating Temperature:

-55 °C

Height:

9.01mm

3D Model:

https://www.traceparts.com/els/rs-components/en/api/viewer/3d?SupplierID=RS_COMPONENTS&PartNumber=81497&DisplayLogo=False